| Varenummer : | DTC123JUBHZGTL |
|---|---|
| Producent / Mærke : | LAPIS Semiconductor |
| Beskrivelse : | NPN DIGITAL TRANSISTOR (WITH BUI |
| RoHs Status : | Blyfri / RoHS-kompatibel |
| Mængde Tilgængelig | 881086 pcs |
| Dataark | 1.DTC123JUBHZGTL.pdf2.DTC123JUBHZGTL.pdf |
| Vce Mætning (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor Type | NPN - Pre-Biased + Diode |
| Leverandør Device Package | UMT3F |
| Serie | Automotive, AEC-Q101 |
| Modstand - Emitterbase (R2) | 47 kOhms |
| Modstand - Base (R1) | 2.2 kOhms |
| Strøm - Max | 200mW |
| Emballage | Tape & Reel (TR) |
| Pakke / tilfælde | SC-85 |
| Andre navne | DTC123JUBHZGTLTR |
| Monteringstype | Surface Mount |
| Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
| Fabrikantens standard ledetid | 7 Weeks |
| Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
| Frekvens - Overgang | 250MHz |
| Detaljeret beskrivelse | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 200mW Surface Mount UMT3F |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Nuværende - Collector Cutoff (Max) | - |
| Nuværende - Samler (Ic) (Max) | 100mA |
LAPIS Semiconductor
