Varenummer : | FCP165N65S3R0 |
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Producent / Mærke : | AMI Semiconductor / ON Semiconductor |
Beskrivelse : | SUPERFET3 650V TO220 PKG |
RoHs Status : | |
Mængde Tilgængelig | 20466 pcs |
Dataark | FCP165N65S3R0.pdf |
Vgs (th) (Max) @ Id | 4.5V @ 1.9mA |
Vgs (Max) | ±30V |
Teknologi | MOSFET (Metal Oxide) |
Leverandør Device Package | TO-220-3 |
Serie | SuperFET® III |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 9.5A, 10V |
Power Dissipation (Max) | 154W (Tc) |
Emballage | Tube |
Pakke / tilfælde | TO-220-3 |
Driftstemperatur | -55°C ~ 150°C (TJ) |
Monteringstype | Through Hole |
Blyfri status | Lead free |
Inputkapacitans (Ciss) (Max) @ Vds | 1500pF @ 400V |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
FET Type | N-Channel |
FET-funktion | - |
Drevspænding (Maks. RDS On, Min Rds On) | 10V |
Afløb til Source Voltage (VDSS) | 650V |
Detaljeret beskrivelse | N-Channel 650V 19A (Tc) 154W (Tc) Through Hole TO-220-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C | 19A (Tc) |