| Varenummer : | FDMD8900 |
|---|---|
| Producent / Mærke : | AMI Semiconductor / ON Semiconductor |
| Beskrivelse : | MOSFET 2N-CH 30V POWER |
| RoHs Status : | Blyfri / RoHS-kompatibel |
| Mængde Tilgængelig | 31229 pcs |
| Dataark | FDMD8900.pdf |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA |
| Leverandør Device Package | 12-Power3.3x5 |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 19A, 10V |
| Strøm - Max | 2.1W |
| Emballage | Tape & Reel (TR) |
| Pakke / tilfælde | 12-PowerWDFN |
| Andre navne | FDMD8900TR |
| Driftstemperatur | -55°C ~ 150°C (TJ) |
| Monteringstype | Surface Mount |
| Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
| Fabrikantens standard ledetid | 39 Weeks |
| Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds | 2605pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Type | 2 N-Channel (Dual) |
| FET-funktion | Standard |
| Afløb til Source Voltage (VDSS) | 30V |
| Detaljeret beskrivelse | Mosfet Array 2 N-Channel (Dual) 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C | 19A, 17A |
AMI Semiconductor / ON Semiconductor
