Varenummer : | FQP50N06L |
---|---|
Producent / Mærke : | AMI Semiconductor / ON Semiconductor |
Beskrivelse : | MOSFET N-CH 60V 52.4A TO-220 |
RoHs Status : | Blyfri / RoHS-kompatibel |
Mængde Tilgængelig | 35757 pcs |
Dataark | 1.FQP50N06L.pdf2.FQP50N06L.pdf |
Vgs (th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Teknologi | MOSFET (Metal Oxide) |
Leverandør Device Package | TO-220AB |
Serie | QFET® |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 26.2A, 10V |
Power Dissipation (Max) | 121W (Tc) |
Emballage | Tube |
Pakke / tilfælde | TO-220-3 |
Driftstemperatur | -55°C ~ 175°C (TJ) |
Monteringstype | Through Hole |
Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
Fabrikantens standard ledetid | 6 Weeks |
Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds | 1630pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 5V |
FET Type | N-Channel |
FET-funktion | - |
Drevspænding (Maks. RDS On, Min Rds On) | 5V, 10V |
Afløb til Source Voltage (VDSS) | 60V |
Detaljeret beskrivelse | N-Channel 60V 52.4A (Tc) 121W (Tc) Through Hole TO-220AB |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C | 52.4A (Tc) |