| Varenummer : | FQPF33N10L |
|---|---|
| Producent / Mærke : | AMI Semiconductor / ON Semiconductor |
| Beskrivelse : | MOSFET N-CH 100V 18A TO-220F |
| RoHs Status : | Blyfri / RoHS-kompatibel |
| Mængde Tilgængelig | 54527 pcs |
| Dataark | FQPF33N10L.pdf |
| Vgs (th) (Max) @ Id | 2V @ 250µA |
| Vgs (Max) | ±20V |
| Teknologi | MOSFET (Metal Oxide) |
| Leverandør Device Package | TO-220F |
| Serie | QFET® |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 9A, 10V |
| Power Dissipation (Max) | 41W (Tc) |
| Emballage | Tube |
| Pakke / tilfælde | TO-220-3 Full Pack |
| Andre navne | FQPF33N10L-ND FQPF33N10LFS |
| Driftstemperatur | -55°C ~ 175°C (TJ) |
| Monteringstype | Through Hole |
| Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
| Fabrikantens standard ledetid | 5 Weeks |
| Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds | 1630pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 5V |
| FET Type | N-Channel |
| FET-funktion | - |
| Drevspænding (Maks. RDS On, Min Rds On) | 5V, 10V |
| Afløb til Source Voltage (VDSS) | 100V |
| Detaljeret beskrivelse | N-Channel 100V 18A (Tc) 41W (Tc) Through Hole TO-220F |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C | 18A (Tc) |
AMI Semiconductor / ON Semiconductor
