| Varenummer : | GP2M012A080NG |
|---|---|
| Producent / Mærke : | Global Power Technologies Group |
| Beskrivelse : | MOSFET N-CH 800V 12A TO3PN |
| RoHs Status : | Blyfri / RoHS-kompatibel |
| Mængde Tilgængelig | 5013 pcs |
| Dataark | GP2M012A080NG.pdf |
| Vgs (th) (Max) @ Id | 5V @ 250µA |
| Vgs (Max) | ±30V |
| Teknologi | MOSFET (Metal Oxide) |
| Leverandør Device Package | TO-3PN |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
| Power Dissipation (Max) | 416W (Tc) |
| Emballage | Tube |
| Pakke / tilfælde | TO-3P-3, SC-65-3 |
| Andre navne | 1560-1211-1 1560-1211-1-ND 1560-1211-5 |
| Driftstemperatur | -55°C ~ 150°C (TJ) |
| Monteringstype | Through Hole |
| Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
| Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds | 3370pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 79nC @ 10V |
| FET Type | N-Channel |
| FET-funktion | - |
| Drevspænding (Maks. RDS On, Min Rds On) | 10V |
| Afløb til Source Voltage (VDSS) | 800V |
| Detaljeret beskrivelse | N-Channel 800V 12A (Tc) 416W (Tc) Through Hole TO-3PN |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C | 12A (Tc) |
Global Power Technologies Group
