Varenummer : | RN1969FE(TE85L,F) |
---|---|
Producent / Mærke : | Toshiba Semiconductor and Storage |
Beskrivelse : | TRANS 2NPN PREBIAS 0.1W ES6 |
RoHs Status : | Blyfri / RoHS-kompatibel |
Mængde Tilgængelig | 4255 pcs |
Dataark | RN1969FE(TE85L,F).pdf |
Spænding - Samler Emitter Opdeling (Max) | 50V |
Vce Mætning (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Leverandør Device Package | ES6 |
Serie | - |
Modstand - Emitterbase (R2) | 22 kOhms |
Modstand - Base (R1) | 47 kOhms |
Strøm - Max | 100mW |
Emballage | Original-Reel® |
Pakke / tilfælde | SOT-563, SOT-666 |
Andre navne | RN1969FE(TE85LF)DKR |
Monteringstype | Surface Mount |
Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
Frekvens - Overgang | 250MHz |
Detaljeret beskrivelse | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Nuværende - Collector Cutoff (Max) | 100nA (ICBO) |
Nuværende - Samler (Ic) (Max) | 100mA |