| Varenummer : | SCT3120ALGC11 |
|---|---|
| Producent / Mærke : | LAPIS Semiconductor |
| Beskrivelse : | MOSFET NCH 650V 21A TO247N |
| RoHs Status : | Blyfri / RoHS-kompatibel |
| Mængde Tilgængelig | 5101 pcs |
| Dataark | 1.SCT3120ALGC11.pdf2.SCT3120ALGC11.pdf |
| Vgs (th) (Max) @ Id | 5.6V @ 3.33mA |
| Vgs (Max) | +22V, -4V |
| Teknologi | SiCFET (Silicon Carbide) |
| Leverandør Device Package | TO-247N |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
| Power Dissipation (Max) | 103W (Tc) |
| Emballage | Tube |
| Pakke / tilfælde | TO-247-3 |
| Driftstemperatur | 175°C (TJ) |
| Monteringstype | Through Hole |
| Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
| Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds | 460pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
| FET Type | N-Channel |
| FET-funktion | - |
| Drevspænding (Maks. RDS On, Min Rds On) | 18V |
| Afløb til Source Voltage (VDSS) | 650V |
| Detaljeret beskrivelse | N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C | 21A (Tc) |
LAPIS Semiconductor
