| Varenummer : | SIHP28N65E-GE3 |
|---|---|
| Producent / Mærke : | Electro-Films (EFI) / Vishay |
| Beskrivelse : | MOSFET N-CH 650V 29A TO220AB |
| RoHs Status : | |
| Mængde Tilgængelig | 10695 pcs |
| Dataark | SIHP28N65E-GE3.pdf |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Teknologi | MOSFET (Metal Oxide) |
| Leverandør Device Package | TO-220AB |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 112 mOhm @ 14A, 10V |
| Power Dissipation (Max) | 250W (Tc) |
| Emballage | Tube |
| Pakke / tilfælde | TO-220-3 |
| Driftstemperatur | -55°C ~ 150°C (TJ) |
| Monteringstype | Through Hole |
| Inputkapacitans (Ciss) (Max) @ Vds | 3405pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Type | N-Channel |
| FET-funktion | - |
| Drevspænding (Maks. RDS On, Min Rds On) | 10V |
| Afløb til Source Voltage (VDSS) | 650V |
| Detaljeret beskrivelse | N-Channel 650V 29A (Tc) 250W (Tc) Through Hole TO-220AB |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C | 29A (Tc) |
Electro-Films (EFI) / Vishay
