Varenummer : | STU6N60M2 |
---|---|
Producent / Mærke : | STMicroelectronics |
Beskrivelse : | MOSFET N-CH 600V IPAK |
RoHs Status : | Blyfri / RoHS-kompatibel |
Mængde Tilgængelig | 51444 pcs |
Dataark | STU6N60M2.pdf |
Vgs (th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±25V |
Teknologi | MOSFET (Metal Oxide) |
Leverandør Device Package | I-PAK |
Serie | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.25A, 10V |
Power Dissipation (Max) | 60W (Tc) |
Emballage | Tube |
Pakke / tilfælde | TO-251-3 Short Leads, IPak, TO-251AA |
Andre navne | 497-13978-5 STU6N60M2-ND |
Driftstemperatur | -55°C ~ 150°C (TJ) |
Monteringstype | Through Hole |
Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
Inputkapacitans (Ciss) (Max) @ Vds | 232pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
FET Type | N-Channel |
FET-funktion | - |
Drevspænding (Maks. RDS On, Min Rds On) | 10V |
Afløb til Source Voltage (VDSS) | 600V |
Detaljeret beskrivelse | N-Channel 600V 4.5A (Tc) 60W (Tc) Through Hole I-PAK |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C | 4.5A (Tc) |