| Varenummer : | RN1909FE(TE85L,F) |
|---|---|
| Producent / Mærke : | Toshiba Semiconductor and Storage |
| Beskrivelse : | TRANS 2NPN PREBIAS 0.1W ES6 |
| RoHs Status : | Blyfri / RoHS-kompatibel |
| Mængde Tilgængelig | 390171 pcs |
| Dataark | RN1909FE(TE85L,F).pdf |
| Spænding - Samler Emitter Opdeling (Max) | 50V |
| Vce Mætning (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Leverandør Device Package | ES6 |
| Serie | - |
| Modstand - Emitterbase (R2) | 22 kOhms |
| Modstand - Base (R1) | 47 kOhms |
| Strøm - Max | 100mW |
| Emballage | Cut Tape (CT) |
| Pakke / tilfælde | SOT-563, SOT-666 |
| Andre navne | RN1909FE(TE85LF)CT |
| Monteringstype | Surface Mount |
| Fugtfølsomhedsniveau (MSL) | 1 (Unlimited) |
| Blyfri Status / RoHS Status | Lead free / RoHS Compliant |
| Frekvens - Overgang | 250MHz |
| Detaljeret beskrivelse | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Nuværende - Collector Cutoff (Max) | 100nA (ICBO) |
| Nuværende - Samler (Ic) (Max) | 100mA |
Toshiba Semiconductor and Storage
